?004 fairchild semiconductor corporation j une 2004 RMWL38001 rev. c RMWL38001 RMWL38001 37-40 ghz low noise amplifier mmic general description the RMWL38001 is a 4-stage gaas mmic amplifier designed as a 37 to 40 ghz low noise amplifier for use in point to point and point to multi-point radios, and various communications applications. in conjunction with other fairchild rf components amplifiers, multipliers and mixers it forms part of a complete 38 ghz transmit/receive chipset. the RMWL38001 utilizes our 0.25? power phemt process and is sufficiently versatile to serve in a variety of low noise amplifier applications. features ? mil substrate noise figure 2.7db (typ.) small-signal gain 22db (typ.) ? db compressed pout 13.5dbm (typ.) chip size 2.9mm x 1.25mm absolute ratings symbol parameter ratings units vd positive dc voltage (+4v typical) +6 v vg negative dc voltage -2 v vdg simultaneous (vd ?vg) 8 v i d p ositive dc current 75 ma p in rf input power (from 50 ? source) +6 dbm t c operating baseplate temperature -30 to +85 ? t stg storage temperature range -55 to +125 ? r jc thermal resistance (channel to backside) 169 ?/w device
?004 fairchild semiconductor corporation RMWL38001 rev. c RMWL38001 electrical characteristics (at 25?), 50 ? system, vd = +4v, quiescent current idq = 50 ma note: 1: typical range of negative gate voltage is -0.9 to -0.1 v to set typical idq of 50 ma. p arameter min typ max units f requency range 37 40 ghz gate supply voltage (vg) 1 -0.5 v noise figure 2.7 4.0 db gain small signal at pin = -20 dbm 22 db gainvariation vs frequency 1.5 db gain at 1 dbm compression 21 db po w er output at 1 db compression 13.5 dbm po w er output saturated 15 dbm drain current at pin = -20 dbm 50 ma drain current at 1db compression 55 ma input return loss (pin = -15 dbm) 12 db output return loss (pin = -15 dbm) 13 db oip3 23 dbm figure 1. functional block diagram drain supply vd1 drain supply vd3 drain supply vd4 drain supply vd2 mmic chip rf out rf in ground (back of the chip) gate supply vg1 gate supply vg1 application information caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325? for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of the chip is gold plated and is used as rf and dc ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
?004 fairchild semiconductor corporation RMWL38001 rev. c RMWL38001 0.0 0.0 0.475 0.6245 0.774 1.25 1.25 0.6255 0.476 0.0 0.775 2.9 2.9 0.293 1.476 1.7375 2.013 2.645 1.895 0.895 0.645 0.0 dimensions in mm figure 2. chip layout and bond pad locations (chip size is 2.9mm x 1.25mm x 100m. back of chip is rf and dc ground) figure 3. recommended application schematic circuit diagram drain supply vd = +4v l = bond wire inductance ground (back of chip) gate supply vg rf in rf out mmic chip l l ll ll l l l l l 100pf 100pf 100pf 100pf 100pf 10,000pf 10,000pf l l
?004 fairchild semiconductor corporation RMWL38001 rev. c RMWL38001 figure 4. recommended assembly diagram 100pf 100pf 100pf 10,000pf 10,000pf 100pf 100pf note: use 0.003" by 0.0005" gold ribbon for bonding. rf input and output bonds should be less than 0.015" long with stress relief. 5 mil thick alumina 50 ? rf input rf output l < 0.015" (4 places) vg (negative) vdd (positive) die-attach 80au/20sn 2 mil gap 5 mil thick alumina 50 ? recommended procedure for biasing and operation caution: loss of gate voltage (vg) while drain voltage (vd) is present may damage the amplifier chip. the following sequence of steps must be followed to properly test the amplifier: step 1: turn off rf input power. step 2: connect the dc supply grounds to the grounds of the chip carrier. slowly apply negative gate bias supply voltage of -1.5v to vg. step 3: slowly apply positive drain bias supply voltage of +4v to vd. step 4: adjust gate bias voltage to set the quiescent current of idq = 50ma. step 5: after the bias condition is established, rf input signal may now be applied at the appropriate frequency band. step 6: follow turn-off sequence of: (i) turn off rf input power, (ii) turn down and off drain voltage (vd), (iii) turn down and off gate bias voltage (vg).
?004 fairchild semiconductor corporation RMWL38001 rev. c RMWL38001 typical characteristics RMWL38001, 37?40ghz low-noise amplifier, typical performance, vd = 4v, idq = 50ma, chip bonded into 50 ? test fixture RMWL38001, 37?40ghz low-noise amplifier, typical performance, on-wafer measurements, vd = 4v, idq = 50ma -30 -20 -10 0 10 20 30 010203 04050 frequency (ghz) frequency (ghz) s21 (db) noise figure (db) s2 1 s22 s11 RMWL38001, 37?40ghz low-noise amplifier, typical noise figure, vd = 4v, idq = 50ma and 65ma, chip bonded into 50 ? test fixture 2 2.5 3 3.5 4 35 36 37 38 39 40 frequency (ghz) 65ma 50ma 3db compressed 1db compressed 0 1 2 3 4 37 37.5 38 38.5 39 39.5 40 gain (db) noise figure (db) RMWL38001, 37?40ghz low-noise amplifier, typical performance, on-wafer measurements, vd = 4v, idq = 50ma frequency (ghz) 10 12 14 16 18 20 37 37.5 38 38.5 39 39.5 40 output power (dbm) RMWL38001, 37?40ghz low-noise amplifier, typical performance, vd = 4v, idq = 50ma and 65ma, chip bonded into 50 ? test fixture 20 21 22 23 25 24 26 35 36 37 38 39 40 frequency (ghz) 65ma 50ma
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